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公開日期標題作者
2007A 2.4/5 GHz dual-band VCO using a variable inductor and switched resonatorKao, H. L.; Yang, D. Y.; Chin, Albert; McAlister, S. P.; 電機學院; College of Electrical and Computer Engineering
2008A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent LinearityChang, T.; Kao, H. L.; Chen, Y. J.; Liu, S. L.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Comparison of InGaAs MOSFETs with germanium-on-insulator CMOSChin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrateKao, H. L.; Chin, Albert; Liao, C. C.; Tseng, Y. Y.; McAlister, S. P.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
8-十二月-2008A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layersChang, Ming-Feng; Lee, Po-Tsung; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2008Good 150 degrees C Retention and Fast Erase Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4 LayerLin, S. H.; Chin, Albert; Yeh, F. S.; McAlister, S. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2008High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees CCheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007HtLaON n-MOSFETs using a low work function HfSix gateCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrodeCheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain DesignChang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Improvement of the performance of strained 0.13 mu m MOSFETs mounted on flexible plastic substratesKao, H. L.; Liao, C. C.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrodeCheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2008Low subthreshold swing HfLaO/pentacene organic thin-film transistorsChang, M. R.; Lee, P. T.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2007A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHzKao, H. L.; Chin, Albert; Chang, K. C.; McAlister, S. P.; 交大名義發表; National Chiao Tung University
1-十月-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
1-二月-2009Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate DielectricChang, M. F.; Lee, P. T.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2007Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitorsChiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.; 機械工程學系; 奈米科技中心; Department of Mechanical Engineering; Center for Nanoscience and Technology
1-八月-2007Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitorsChiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2007Very low noise in 90nm node RF MOSFETs using a new layoutKao, H. L.; Chin, Albert; Liao, C. C.; McAlister, S. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctionsCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 20 筆