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公開日期標題作者
1-一月-2003Analysis of narrow width effects in polycrystalline silicon thin film transistorsZan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2000Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCyLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2000Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase depositionShih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1999Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-2002Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistorsPeng, DZ; Zan, HW; Shih, PS; Chang, TC; Lin, CW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistorsShih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2000Dimensional effects on the reliability of polycrystalline silicon thin-film transistorsZan, HW; Shih, PS; Chang, TC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2000Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealingHuang, JC; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-一月-2000The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistorChang, CY; Lee, YS; Huang, TY; Shih, PS; Lin, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-十一月-1999Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)Luo, JS; Huang, JC; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998High performance thin-film transistors with low-high-low band gap engineeringChang, CY; Lee, YS; Shih, PS; Lin, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2000Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishingShih, PS; Chang, TC; Liang, CY; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealingLuo, JS; Hang, YL; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-九月-1998Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealingChen, DR; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase depositionShih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-十二月-2002Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drainPeng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1999Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees CLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drainZan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
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