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顯示 1 到 17 筆資料，總共 17 筆
公開日期標題作者
1-四月-2014Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitorsQuang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2012Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN TemplatesWong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2012Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor CapacitorsTrinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAsTrinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2010Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAsTrinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2012Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cellTran, Binh-Tinh; Chang, Edward-Yi; Trinh, Hai-Dang; Lee, Ching-Ting; Sahoo, Kartika Chandra; Lin, Kung-Liang; Huang, Man-Chi; Yu, Hung-Wei; Luong, Tien-Tung; Chung, Chen-Chen; Nguyen, Chi-Lang; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2013Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrationsTang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
2012High k/III-V Structures: Interfaces, Oxides Quality and Down ScalingTrinh, Hai-Dang; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
18-四月-2011High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2014Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface TreatmentsLuc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung; 材料科學與工程學系; 電機工程學系; Department of Materials Science and Engineering; Department of Electrical and Computer Engineering
2014In-x Ga1-x As Materials for Post CMOS Application: Materials and Device AspectsChang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2009InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate DielectricChang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2009InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate DielectricChang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2009InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate DielectricChang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-2013Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor StructuresTrinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 17 筆資料，總共 17 筆