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公開日期標題作者
1-三月-2012Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching DeviceSyu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
29-四月-2013Atomic-level quantized reaction of HfOx memristorSyu, Yong-En; Chang, Ting-Chang; Lou, Jyun-Hao; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2012Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-八月-2011Bipolar resistive switching of chromium oxide for resistive random access memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2006A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effectsChen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Wang, Hung-Hsiang; Lai, Ming-Jinn; Tsai, Ming-Jinn; Chao, Tien Sheng; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
24-十二月-2007Cerium oxide nanocrystals for nonvolatile memory applicationsYang, Shao-Ming; Chien, Chao-Hsin; Huang, Jiun-Jia; Lei, Tan-Fu; Tsai, Ming-Jinn; Lee, Lurng-Shehng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2013Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devicesZhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)Tsui, Bing-Yue; Weng, Chien-Li; Chang, Chih-Lien; Wei, Jeng-Hua; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-七月-2013Enhancement of the stability of resistive switching characteristics by conduction path reconstructionHuang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed OperationChen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, Heng-Yuan; Lin, Cha-Hsin; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008High charge storage characteristics of CeO2 nanocrystals for novolatile memory applicationsYang, Shao-Ming; Huang, Jiun-Jia; Chien, Chao-Hsin; Taeng, Pei-Jer; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN StructureTseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2011Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory ApplicationsSyu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2011Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory ApplicationsSyu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
28-六月-2010Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin filmsChen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-2013Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layerHuang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-一月-2013Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memoryChen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2012Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium OxideHuang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2014Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide FilmYang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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