1. 目前位置：

瀏覽 的方式： 作者 Tsai, Tsung-Ling

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
11-九月-2017Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memoryChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
十月-2016Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer StructureTsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-七月-2015Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double formingSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrodeSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
27-一月-2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmsIsmail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
11-四月-2016A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structureTsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM DevicesTsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-五月-2016Impacts of Co doping on ZnO transparent switching memory device characteristicsSimanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double LayersTsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014Resistive switching characteristics of Pt/CeOx/TiN memory deviceIsmail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2015Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current OperationTsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2015Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applicationsIsmail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-二月-2014Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large enduranceHuang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-2013Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristicsLee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-一月-2015Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory deviceTsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen; 電子物理學系; Department of Electrophysics
2016氧化鋯電阻式記憶體元件之熱相關研究蔡宗霖; 曾俊元; Tsai, Tsung-Ling; 電子研究所
顯示 1 到 16 筆資料，總共 16 筆