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公開日期標題作者
1-一月-2001Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodesYang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL; 機械工程學系; Department of Mechanical Engineering
1-三月-2006Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectricsLee, YJ; Ho, PT; Yang, WL; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-七月-2001High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devicesYang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-六月-2000Improvement of polysilicon oxide integrity using NF3-annealingYang, WL; Shieh, MS; Chen, YM; Chao, TS; Liu, DG; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2002Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrierYang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP; 機械工程學系; 電子物理學系; Department of Mechanical Engineering; Department of Electrophysics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1996Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistorsLin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaningChao, TS; Lin, YH; Yang, WL; 電子物理學系; Department of Electrophysics
2004NBTI effects of pMOSFETs with different nitrogen dose imlantationLee, YJ; Tang, LC; Wu, MH; Chao, TS; Ho, PT; Lai, D; Yang, WL; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Novel cleaning solutions for polysilicon film post chemical mechanical polishingPan, TM; Lei, TF; Chen, CC; Chao, TS; Liaw, MC; Yang, WL; Tsai, MS; Lu, CP; Chang, WH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2006Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatmentChao, TS; Lin, YH; Yang, WL; 電子物理學系; Department of Electrophysics
1-五月-2000Retardation in the chemical-mechanical polish of the boron-doped polysilicon and siliconYang, WL; Cheng, CY; Tsai, MS; Liu, DG; Shieh, MS; 交大名義發表; National Chiao Tung University
1-七月-2003Stability investigation of single-wafer process by using a spin etcherKang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-六月-1997Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structureYang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxidesYang, WL; Chao, TS; Lai, KH; 電子物理學系; Department of Electrophysics
顯示 1 到 16 筆資料，總共 16 筆