標題: 應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發
Technology Development on Gate Oxides and Polysilicon Dielectric Layers for Deep Submicron CMOS Devices
作者: 雷添福
LEI TAN-FU
交通大學電子工程系
公開日期: 2000
官方說明文件#: NSC89-2215-E009-036
URI: http://hdl.handle.net/11536/100693
https://www.grb.gov.tw/search/planDetail?id=720334&docId=135306
Appears in Collections:Research Plans


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