標題: | 應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發 Technology Development on Gate Oxides and Polysilicon Dielectric Layers for Deep Submicron CMOS Devices |
作者: | 雷添福 LEI TAN-FU 交通大學電子工程系 |
公開日期: | 2000 |
官方說明文件#: | NSC89-2215-E009-036 |
URI: | http://hdl.handle.net/11536/100693 https://www.grb.gov.tw/search/planDetail?id=720334&docId=135306 |
Appears in Collections: | Research Plans |
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