標題: | FLEXIBLE NON-VOLATILE MEMORY |
作者: | LIU Po-Tsun FAN Yang-Shun |
公開日期: | 6-三月-2014 |
摘要: | A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells. |
官方說明文件#: | H01L045/00 |
URI: | http://hdl.handle.net/11536/104947 |
專利國: | USA |
專利號碼: | 20140061569 |
顯示於類別: | 專利資料 |