| 標題: | APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE |
| 作者: | Shirota Riichiro Watanabe Hiroshi |
| 公開日期: | 3-Jan-2013 |
| 摘要: | An application circuit and an operation method of a semiconductor device are provided. A leakage current among a control gate diffusion layer, a source diffusion layer and a drain is reduced by adjusting biases applied on a double well region, so as to reduce the product cost and improve the accuracy of a battery-less electronic timer that uses the semiconductor device. |
| 官方說明文件#: | H01L029/788 G11C016/02 |
| URI: | http://hdl.handle.net/11536/105092 |
| 專利國: | USA |
| 專利號碼: | 20130003466 |
| Appears in Collections: | Patents |
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