標題: | III-V METAL-OXIDE-SEMICONDUCTOR DEVICE |
作者: | CHANG Edward Yi LIN Yueh-Chin |
公開日期: | 9-Feb-2012 |
摘要: | A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can be used to increase the capacitance of the semiconductor device. |
官方說明文件#: | H01L029/20 H01L029/94 H01L029/78 |
URI: | http://hdl.handle.net/11536/105217 |
專利國: | USA |
專利號碼: | 20120032279 |
Appears in Collections: | Patents |
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