III-V METAL-OXIDE-SEMICONDUCTOR DEVICE

標題:	III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
作者:	CHANG Edward Yi LIN Yueh-Chin
公開日期:	9-二月-2012
摘要:	A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can be used to increase the capacitance of the semiconductor device.
官方說明文件#:	H01L029/20 H01L029/94 H01L029/78
URI:	http://hdl.handle.net/11536/105217
專利國:	USA
專利號碼:	20120032279
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。