Bipolar conductivity in amorphous HfO2

Abstract

This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]