標題: Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
作者: Kao, HL
Chin, A
Lai, JM
Lee, CF
Chiang, KC
McAlister, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NFmin;RF noise;lifetime;stress;model
公開日期: 2005
摘要: A novel microstrip line layout is developed to direct measure the min. noise figure (NFmin) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18 mu m MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed the self-consistent DC, S-parameters and NFmin model to predict device characteristics after the continuous stress with good accuracy.
URI: http://hdl.handle.net/11536/17813
ISBN: 0-7803-8983-2
ISSN: 1529-2517
期刊: 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers
起始頁: 157
結束頁: 160
Appears in Collections:Conferences Paper