Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

Abstract

A novel microstrip line layout is developed to direct measure the min. noise figure (NFmin) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18 mu m MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed the self-consistent DC, S-parameters and NFmin model to predict device characteristics after the continuous stress with good accuracy.