標題: Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer
作者: Chen, C. C.
Wu, Y. C.
Tung, T. F.
Wu, H. Y.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
URI: http://hdl.handle.net/11536/20986
http://dx.doi.org/10.1149/1.3375627
ISBN: 978-1-60768-141-0
ISSN: 1938-5862
DOI: 10.1149/1.3375627
期刊: ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT
Volume: 28
Issue: 1
起始頁: 401
結束頁: 404
Appears in Collections:Conferences Paper


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