Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer

標題:	Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer
作者:	Chen, C. C. Wu, Y. C. Tung, T. F. Wu, H. Y. 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	2010
摘要:	Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
URI:	http://hdl.handle.net/11536/20986 http://dx.doi.org/10.1149/1.3375627
ISBN:	978-1-60768-141-0
ISSN:	1938-5862
DOI:	10.1149/1.3375627
期刊:	ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT
Volume:	28
Issue:	1
起始頁:	401
結束頁:	404
顯示於類別：	會議論文

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