標題: Numerical Study of Very Small Floating Islands
作者: Watanabe, Hiroshi
Yao, Kira (Chih-Wei)
Lin, Jerry (Po-Jui)
交大名義發表
電機資訊學士班
National Chiao Tung University
Undergraduate Honors Program of Electrical Engineering and Computer Science
關鍵字: Capacitance coupling ratio;Coulomb blockade;device modeling;floating gate;floating island;silicon dot;single-electron phenomena;trap-assisted tunneling
公開日期: 1-Apr-2014
摘要: The electrical property of very small floating island whose diameter is less than the de Broglie length is numerically investigated without fitting parameters. In general, it is difficult to well define the capacitance of very small floating islands. In this paper, instead of using the capacitance of islands, the kicking algorithm is applied for simulating the single-electron phenomena of spherical islands (the diameter: O = 0.6, 4, and 6 nm). As a result, the self-potentials of islands are successfully obtained within the precision equivalent to the movement of the sole electron with regard to given gate voltages. In addition, the transient simulation is demonstrated using the dwell time during which an electron is waiting for the next tunneling. The Coulomb blockade is successfully simulated without using the capacitance of very small floating islands. It is also found that trap-assisted tunneling is prohibited by Coulomb blockade at low electric field and can occur at high electric field.
URI: http://dx.doi.org/10.1109/TED.2014.2306935
http://hdl.handle.net/11536/23952
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2306935
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 4
起始頁: 1145
結束頁: 1152
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