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顯示 3 到 22 筆資料，總共 38 筆 < 上一頁   下一頁 >
公開日期標題作者
1-二月-2012Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si SubstratesHsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; 半導體材料與製程設備組; 照明與能源光電研究所; Department of Materials Science and Engineering; Degree Program of Semiconductor Material and Process Equipment; Institute of Lighting and Energy Photonics
1-一月-2014Effect of V/III Ratios on Surface Morphology in a GaSb Thin Film Grown on GaAs Substrate by MOCVDHsiao, Chih-Jen; Liu, Chun-Kuan; Huynh, Sa-Hoang; Minh, Thien-Huu Ha; Yu, Hung-Wei; Nguyen, Hong-Quan; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機工程學系; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electrical and Computer Engineering
1-十二月-2014Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar CellsHsu, Ching-Hsiang; Chang, Edward Yi; Chang, Hsun-Jui; Yu, Hung-Wei; Hong Quan Nguyen; Chung, Chen-Chen; Maa, Jer-Shen; Pande, Krishna; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
26-十一月-2007Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy methodLin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
18-四月-2011High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十一月-2014Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrateHsiao, Yu-Lin; Wang, Yi-Jie; Chang, Chia-Ao; Weng, You-Chen; Chen, Yen-Yu; Chen, Kai-Wei; Maa, Jer-Shen; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics
7-十月-2013Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistorsWong, Yuen-Yee; Chen, Yu-Kong; Maa, Jer-Shen; Yu, Hung-Wei; Tu, Yung-Yi; Dee, Chang-Fu; Yap, Chi-Chin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-五月-2014Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substratesHsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; Wang, Yi-Jie; Weng, You-Chen; 材料科學與工程學系; 光電系統研究所; Department of Materials Science and Engineering; Institute of Photonic System
2008MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN bufferLin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; 材料科學與工程學系; Department of Materials Science and Engineering
一月-2017Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor depositionHsiao, Chih-Jen; Minh-Thien-Huu Ha; Liu, Chun-Kuan; Hong-Quan Nguyen; Yu, Hung-Wei; Chang, Sheng-Po; Wong, Yuen-Yee; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-七月-2017Reliability improvement in GaN HEMT power device using a field plate approachWu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung; 材料科學與工程學系; 光電系統研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; International College of Semiconductor Technology
1-十二月-2015The reliability study of III-V solar cell with copper based contactsHsu, Ching-Hsiang; Chang, Edward Yi; Chang, Hsun-Jui; Maa, Jer-Shen; Pande, Krishna; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
2012以有機金屬化學氣相沉積成長氮化銦鋁/氮化鋁/氮化鎵異質結構之高電子遷移率電晶體的應用劉冠昕; Liu, Kuan-Shin; 張翼; 馬哲申; Chang, Edward Yi; Maa, Jer-Shen; 影像與生醫光電研究所
2014以氧化鑭/氧化鉿堆疊式氧化層作為高功率氮化鎵高電子遷移率電晶體之閘極氧化層研究藍偉誠; Lan, Wei-Cheng; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 光電系統研究所
2015以混合式氧化鑭閘極氧化層改善氮化鎵 高電子遷移率電晶體線性度之研究施旺成; Shih, Wang-Cheng; 張翼,; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 光電系統研究所
2012以熱裂解化學沉積法成長碳化矽薄膜之研究魏廷維; Wei, Ting-Wei; 張翼; 馬哲申; Chang, Edward Yi; Maa, Jer-Shen; 光電系統研究所
2015側壁蝕刻與非合金歐姆接觸之增強型砷化銦通道高電子遷移率電晶體應用於高頻與低耗能邏輯元件之特性評估楊凱鈞; Yang, Kai-Chun; 張翼; 馬哲申; Chang, Yi; Maa, Jer-Shen; 光電系統研究所
2017利用中性粒子束蝕刻製作掘入式閘極增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體於高頻高功率上的應用黃嘉慶; 張翼; 馬哲申; Huang, Chia-Ching; Chang, Edward Yi; Maa, Jer-Shen; 影像與生醫光電研究所
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