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公開日期標題作者
1-十二月-2017A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak PathHsieh, E. Ray; Kuo, Yen Chen; Cheng, Chih-Hung; Kuo, Jing Ling; Jiang, Meng-Ru; Lin, Jian-Li; Chen, Hung-Wen; Chung, Steve S.; Liu, Chuan-Hsi; Chen, Tse Pu; Huang, Shih An; Chen, Tai-Ju; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-九月-2012Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistorsLo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
8-七月-2013Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistorsTsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-十二月-2014Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETsLiu, Kuan-Ju; Chang, Ting-Chang; Yang, Ren-Ya; Chen, Ching-En; Ho, Szu-Han; Tsai, Jyun-Yu; Hsieh, Tien-Yu; Cheng, Osbert; Huang, Cheng-Tung; 電機工程學系; Department of Electrical and Computer Engineering
28-九月-2013Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistorsTsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2016Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-TransistorsLiu, Kuan-Ju; Chang, Ting-Chang; Lin, Chien-Yu; Chen, Ching-En; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Hsi-Wen; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1970Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-十二月-2012Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
四月-2016Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate DielectricsChen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate StacksHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
9-四月-2012Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stressLo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
30-十二月-2011Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacksDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-2008Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOSChenga, P. L.; Liao, C. I.; Chien, C. C.; Yang, C. L.; Ting, S. F.; Jeng, L. S.; Huang, C. T.; Cheng, Osbert; Tzou, S. F.; Hsu, W. S.; 交大名義發表; National Chiao Tung University
1-十二月-2016Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistorsLu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
6-十月-2014Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacksTsai, Jyun-Yu; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G EraHsieh, E. R.; Wang, H. W.; Liu, C. H.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018An Energy Efficient FinFET-based Field Programmable Synapse Array (FPSA) Feasible for One-shot Learning on EDGE AIKuo, J. L.; Chen, H. W.; Hsieh, E. R.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-十一月-2010Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strainDai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Chen, Shih-Ching; Tsai, Chih-Tsung; Lo, Wen-Hung; Ho, Szu-Han; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFETHsieh, E. Ray; Jiang, Meng-Ru; Lin, Jian-Li; Chung, Steve S.; Chen, Tse Pu; Huang, Shih An; Chen, Tai-Ju; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2017Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETsLu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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