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公開日期標題作者
2012Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field MobilityChin, Albert; Chen, W. B.; Chen, P. C.; Wu, Y. H.; Chi, C. C.; Lee, Y. J.; Chang-Liao, K. S.; Kuan, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Comparison of InGaAs MOSFETs with germanium-on-insulator CMOSChin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2007Critical current of superconducting YBa2Cu3O7-delta films with different in-plane orientationsLin, P. A.; Chi, C. C.; Rosenstein, B.; 電子物理學系; Department of Electrophysics
2006DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrateKao, H. L.; Chin, Albert; Liao, C. C.; Tseng, Y. Y.; McAlister, S. P.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-六月-2012Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealingChen, C. H.; Niu, H.; Yan, D. C.; Hsieh, H. H.; Lee, C. P.; Chi, C. C.; 奈米科技中心; Center for Nanoscience and Technology
2010Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser AnnealingChen, W. B.; Shie, B. S.; Chin, Albert; Hsu, K. C.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2010Improved Capacitance Density and Reliability of High-k Ni/ZrO(2)/TiN MIM Capacitors Using Laser-Annealing TechniqueTsai, C. Y.; Chiang, K. C.; Lin, S. H.; Hsu, K. C.; Chi, C. C.; Chin, Albert; 電機工程學系; Department of Electrical and Computer Engineering
1-七月-2010Improved Capacitance Density and Reliability of High-k Ni/ZrO2/TiN MIM Capacitors Using Laser-Annealing TechniqueTsai, C. Y.; Chiang, K. C.; Lin, S. H.; Hsu, K. C.; Chi, C. C.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-2014Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealingChen, C. H.; Niu, H.; Yan, D. C.; Hsieh, H. H.; Huang, R. T.; Chi, C. C.; Lee, C. P.; 奈米科技中心; Center for Nanoscience and Technology
15-八月-2014Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealingChen, C. H.; Niu, H.; Yan, D. C.; Hsieh, H. H.; Huang, R. T.; Chi, C. C.; Lee, C. P.; 奈米科技中心; Center for Nanoscience and Technology
1-十一月-2012Pulsed terahertz radiation due to coherent phonon-polariton excitation in < 110 > ZnTe crystalTu, C. M.; Ku, S. A.; Chu, W. C.; Luo, C. W.; Chen, J. C.; Chi, C. C.; 電子物理學系; Department of Electrophysics
17-六月-2013Saturation of the free carrier absorption in ZnTe crystalsKu, S. A.; Tu, C. M.; Chu, W. -C.; Luo, C. W.; Wu, K. H.; Yabushita, A.; Chi, C. C.; Kobayashi, T.; 電子物理學系; Department of Electrophysics
6-七月-2006Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrateChin, A.; Kao, H. L.; Kao, C. H.; Liao, C. C.; Tseng, Y. Y.; Chi, C. C.; 奈米科技中心; Center for Nanoscience and Technology
2012A wide range THz pulses generation in ZnTe crystalsKu, S. A.; Tu, C. -M.; Luo, C. W.; Wu, K. H.; Yabushita, A.; Chi, C. C.; Kobayashi, T.; 電子物理學系; Department of Electrophysics
顯示 1 到 14 筆資料，總共 14 筆