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公開日期標題作者
1-十二月-2010Characteristics of the Fluorinated High-k Inter-Poly DielectricsHsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
2012Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine ImplantationChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Charge Trapping and Detrapping Behavior of Fluorinated HfO(2)/SiON Gate Stacked nMOSFETChen, Yung-Yu; Hsieh, Chih-Ren; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Charge Trapping and Detrapping Behavior of Fluorinated HfO2/SiON Gate Stacked nMOSFETChen, Yung-Yu; Hsieh, Chih-Ren; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-一月-2011Constant voltage stress induced charge trapping and detrapping characteristics of the Si(3)N(4) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO(2)/SiON gate stackChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-一月-2011Constant voltage stress induced charge trapping and detrapping characteristics of the Si3N4 uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO2/SiON gate stackChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO(2)/SiON gate stacked nMOSFETHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
1-十一月-2010Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFETHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectricsHsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
2011Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap levelHsieh, Chih-Ren; Chen, Yung-Yu; Lin, Wen-Shin; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
2009HfO2 Inter-Poly Dielectric Characteristics with Interface Fluorine PassivationChen, Yung-Yu; Hsieh, Chih-Ren; Lu, Kwung-Wen; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-一月-2010Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layerHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2009Reliability Improvement of HfO(2)/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation LayerHsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation LayerHsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2012Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantationChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011氟鈍化製程與氮氧化層於高介電常數金氧半場效應電晶體與快閃記憶體的特性研究謝智仁; Hsieh, Chih-Ren; 林國瑞; 羅正忠; Lin, Gray; Lou, Jen-Chung; 電子研究所
顯示 1 到 16 筆資料，總共 16 筆