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公開日期標題作者
1-八月-19972-V-operation delta-doped power HEMT's for personal handy-phone systemsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-19972-V-operation delta-doped power HEMT's for personal handy-phone systemsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrierChai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1996Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrierChai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-一月-2001A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistorsChang, EY; Lai, YL; Lee, YS; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-1997The high pressure synthesis and characterization of some rare-earth based praseodymium-substituted R2Ba4Cu7O14+delta (R = Sm, Gd, Ho) cupratesLai, YL; Chen, TM; Shih, JT; Kao, HCI; 應用化學系; Department of Applied Chemistry
1-九月-1997High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applicationsLai, YL; Chang, EY; Chang, CY; Tai, MC; Liu, TH; Wang, SP; Chuang, KC; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-1996High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5PChai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996High-performance pseudomorphic power HEMTs for low-voltage wireless communication applicationsLai, YL; Chan, EY; Chang, CY; Liu, TH; Wang, SP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-三月-1997High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applicationsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997The high-pressure synthesis and characterization of some praseodymium-substituted rare-earth based R2Ba4Cu7O14+delta (R = Nd, Sm, Eu, Gd, Ho, Tm)Chen, TM; Lai, YL; Kao, FS; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1999Highly selective etch process for the manufacture of GaAs power MESFET'sChang, EY; Lai, YL; Lee, YS; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-1998A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposureLai, YL; Lai, YK; Chang, CY; Chang, EY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Novel I-line phase shift mask technique for submicron T-shaped gate formationChen, SH; Chang, HC; Fu, DK; Chang, EY; Lai, YL; Cahng, L; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-六月-2006Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2Lai, CH; Lin, BC; Chang, KM; Hsieh, KY; Lai, YL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithographyLai, YL; Chang, EY; Chang, CY; Yang, HPD; Nakamura, K; Shy, SL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 18 筆資料，總共 18 筆