標題: METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
作者: Wu YewChung Sermon
Chen Yu-Chung
公開日期: 3-Jan-2013
摘要: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
官方說明文件#: H01L029/06
H01L021/302
H01L021/26
URI: http://hdl.handle.net/11536/105093
專利國: USA
專利號碼: 20130001752
Appears in Collections:Patents


Files in This Item:

  1. 20130001752.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.