標題: Stacked GeO/SrTiO(x) Resistive Memory with Ultralow Resistance Currents
作者: Cheng, C. H.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 31-Jan-2011
摘要: We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeO(x) on metal-oxide SrTiO(x) to form the cost-effective Ni/GeO(x)/SrTiO(x)/TaN resistive random access memory, ultralow set power of small 1 mu W (0.9 mu A at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10(6) cycling endurance are realized. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549689]
URI: http://dx.doi.org/10.1063/1.3549689
http://hdl.handle.net/11536/25858
ISSN: 0003-6951
DOI: 10.1063/1.3549689
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 5
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