穿隧氧化層內漏電流之暫態特性與物理機制

標題:	穿隧氧化層內漏電流之暫態特性與物理機制 Mechanisms and Transient Characteristics of Stress Induced Leakage Current (SILC) in Tunnel Oxides
作者:	汪大暉 WANG TAHUI 交通大學電子工程系
關鍵字:	氧化層漏電流;暫態特性;物理機制;快閃記憶體;穿隧氧化層;Stress induced leakage current (SILC);Transient characteristic;Mechanism;Flash EEPROM;Tunnel oxide
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-034
URI:	http://hdl.handle.net/11536/94450 https://www.grb.gov.tw/search/planDetail?id=444198&docId=80441
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.