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公開日期
標題
作者
1-五月-2015
2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatments
Luong, Tien-Tung
;
Binh Tinh Tran
;
Ho, Yen-Teng
;
Wei, Ting-Wei
;
Wu, Yue-Han
;
Yen, Tzu-Chun
;
Wei, Lin-Lung
;
Maa, Jer-Shen
;
Chang, Edward Yi
;
材料科學與工程學系
;
光電學院
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
College of Photonics
;
Department of Electronics Engineering and Institute of Electronics
2013
30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT
Rasmi, Amiza
;
Azmi, I. M.
;
Rahim, A. I. A.
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-二月-2010
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
Chang, Chia-Ta
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
Kuo, Chien-I
;
Huang, Jui-Chien
;
Lu, Chung-Yu
;
Miyamoto, Yasuyuki
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
2009
A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Wu, Chien-Ying
;
Chang, Edward Yi
;
Miyamoto, Yasuyuki
;
Chen, Yu-Lin
;
Biswas, Dhrubes
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-十月-2009
460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
Chang, Chia-Ta
;
Hsiao, Shih-Kuang
;
Chang, Edward Yi
;
Hsiao, Yu-Lin
;
Huang, Jui-Chien
;
Lu, Chung-Yu
;
Chang, Huang-Choung
;
Cheng, Kai-Wen
;
Lee, Ching-Ting
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-十一月-2007
60 GHz broadband Ms-to-CPW hot-via flip chip interconnects
Wu, Wei-Cheng
;
Hsu, Li-Han
;
Chang, Edward Yi
;
Kaernfelt, Camilla
;
Zirath, Herbert
;
Starski, J. Piotr
;
Wu, Yun-Chi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
二月-2016
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
Fatah, Faiz Aizad
;
Lin, Yueh-Chin
;
Liu, Ren-Xuan
;
Yang, Kai-Chun
;
Lin, Tai-We
;
Hsu, Heng-Tung
;
Yang, Jung-Hsiang
;
Miyamoto, Yasuyuki
;
Iwai, Hiroshi
;
Hu, Chenming Calvin
;
Salahuddin, Sayeef
;
Chang, Edward Yi
;
材料科學與工程學系
;
光電系統研究所
;
電子工程學系及電子研究所
;
國際半導體學院
;
Department of Materials Science and Engineering
;
Institute of Photonic System
;
Department of Electronics Engineering and Institute of Electronics
;
International College of Semiconductor Technology
1-一月-2010
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
Wang, Chin-Te
;
Kuo, Chien-I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
;
Miyamoto, Yasuyuki
;
Chang, Edward Yi
;
Tsai, Szu-Ping
;
Chiu, Yu-Sheng
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-一月-2010
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
Wang, Chin-Te
;
Kuo, Chien-, I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
;
Miyamoto, Yasuyuki
;
Chang, Edward Yi
;
Tsai, Szu-Ping
;
Chiu, Yu-Sheng
;
材料科學與工程學系
;
Department of Materials Science and Engineering
2007
Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling Technique
Hsu, Heng-Tung
;
Chang, Chia-Yuan
;
Hsu, Heng-Shou
;
Chang, Edward Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
8-九月-2005
[ADJUSTABLE COLLIMATOR AND SPUTTERING APPARATUS WITH THE SAME]
Lee, Cheng-Shih
;
Chang, Edward Yi
1-一月-2010
An Al(2)O(3) AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
Wu, Yun-Chi
;
Lin, Yueh-Chin
;
Chang, Edward Yi
;
Lee, C. T.
;
Kei, Chi-Chung
;
Chang, Chia-Ta
;
Hsu, H. T.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-一月-2010
An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications
Wu, Yun-Chi
;
Lin, Yueh-Chin
;
Chang, Edward Yi
;
Lee, C. T.
;
Kei, Chi-Chung
;
Chang, Chia-Ta
;
Hsu, H. T.
;
材料科學與工程學系
;
Department of Materials Science and Engineering
2008
An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
Chang, Edward Yi
;
Lin, Yueh-Chin
;
Hsiao, Yu-Lin
;
Hsieh, Y. C.
;
Chang, Chia-Yuan
;
Kuo, Chien-I
;
Luo, Guang-Li
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-九月-2008
AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/Ge(x)Si(1-x) metamorphic buffer layers
Chang, Edward Yi
;
Huang, Jui-Chien
;
Lin, Yueh-Chin
;
Hsieh, Yen-Chang
;
Chang, Chia-Yuan
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-九月-2008
AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/GexSi1-x metamorphic buffer layers
Chang, Edward Yi
;
Huang, Jui-Chien
;
Lin, Yueh-Chin
;
Hsieh, Yen-Chang
;
Chang, Chia-Yuan
;
材料科學與工程學系
;
Department of Materials Science and Engineering
十一月-2016
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
Lin, Yen-Ku
;
Noda, Shuichi
;
Lo, Hsiao-Chieh
;
Liu, Shih-Chien
;
Wu, Chia-Hsun
;
Wong, Yuen-Yee
;
Luc, Quang Ho
;
Chang, Po-Chun
;
Hsu, Heng-Tung
;
Samukawa, Seiji
;
Chang, Edward Yi
;
材料科學與工程學系
;
光電系統研究所
;
電子工程學系及電子研究所
;
國際半導體學院
;
Department of Materials Science and Engineering
;
Institute of Photonic System
;
Department of Electronics Engineering and Institute of Electronics
;
International College of Semiconductor Technology
一月-2017
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
Lin, Yen-Ku
;
Noda, Shuichi
;
Lo, Hsiao-Chieh
;
Liu, Shih-Chien
;
Wu, Chia-Hsun
;
Wong, Yuen-Yee
;
Luc, Quang Ho
;
Chang, Po-Chun
;
Hsu, Heng-Tung
;
Samukawa, Seiji
;
Chang, Edward Yi
;
材料科學與工程學系
;
光電系統研究所
;
電子工程學系及電子研究所
;
國際半導體學院
;
Department of Materials Science and Engineering
;
Institute of Photonic System
;
Department of Electronics Engineering and Institute of Electronics
;
International College of Semiconductor Technology
一月-2017
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
Lin, Yen-Ku
;
Noda, Shuichi
;
Lo, Hsiao-Chieh
;
Liu, Shih-Chien
;
Wu, Chia-Hsun
;
Wong, Yuen-Yee
;
Luc, Quang Ho
;
Chang, Po-Chun
;
Hsu, Heng-Tung
;
Samukawa, Seiji
;
Chang, Edward Yi
;
材料科學與工程學系
;
光電系統研究所
;
電子工程學系及電子研究所
;
國際半導體學院
;
Department of Materials Science and Engineering
;
Institute of Photonic System
;
Department of Electronics Engineering and Institute of Electronics
;
International College of Semiconductor Technology
1-十二月-2018
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
Wang, Huan-Chung
;
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Luc, Quang Ho
;
Liu, Shih-Chien
;
Wu, Chia-Hsun
;
Dee, Chang Fu
;
Majlis, Burhanuddin Yeop
;
Chang, Edward Yi
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics