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公開日期標題作者
1-八月-2011Bipolar resistive switching of chromium oxide for resistive random access memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access MemoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Li, Hung-Wei; Tsai, Yu-Ting; Chen, Chi-Wen; Sze, S. M.; Yeh(Huang), Fon-Shan; Tai, Ya-Hsiang; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
15-十二月-2007Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structureChen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Lin, Po-Shun; Chen, Shih-Cheng; Chin, Jing-Yi; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-九月-2013Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistorsChen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chung, Wan-Fang; Chen, Shih-Cheng; Wu, Chang-Pei; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-十二月-2011Developments in nanocrystal memoryChang, Ting-Chang; Jian, Fu-Yen; Chen, Shih-Cheng; Tsai, Yu-Ting; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2013Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory DevicesChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory DevicesTsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applicationsFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidationChen, Shih-Cheng; Chang, Ting-Chang; Hsieh, Chieh-Ming; Li, Hung-Wei; Sze, S. M.; Nien, Wen-Ping; Chan, Chia-Wei; Yeh (Huang), Fon-Shan; Tai, Ya-Hsiang; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
31-五月-2010Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-三月-2011Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh (Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory DevicesTsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chen, Shih-Cheng; Chen, Chi-Wen; Sze, Simon M.; Yeh (Hung), Fon-Shan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-八月-2011Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devicesTsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-八月-2011Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devicesTsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十一月-2011Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memoryFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatmentsChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatmentsChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Reproducible resistance switching of a relatively thin FeO(x) layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structureFeng, Li-Wei; Chang, Yao-Feng; Chang, Chun-Yen; Chang, Ting-Chang; Wang, Shin-Yuan; Chiang, Pei-Wei; Lin, Chao-Cheng; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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