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1-十二月-2010Characteristics of the Fluorinated High-k Inter-Poly DielectricsHsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
2012Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine ImplantationChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Charge Trapping and Detrapping Behavior of Fluorinated HfO(2)/SiON Gate Stacked nMOSFETChen, Yung-Yu; Hsieh, Chih-Ren; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Charge Trapping and Detrapping Behavior of Fluorinated HfO2/SiON Gate Stacked nMOSFETChen, Yung-Yu; Hsieh, Chih-Ren; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-一月-2011Constant voltage stress induced charge trapping and detrapping characteristics of the Si(3)N(4) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO(2)/SiON gate stackChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
17-一月-2011Constant voltage stress induced charge trapping and detrapping characteristics of the Si3N4 uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO2/SiON gate stackChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO(2)/SiON gate stacked nMOSFETHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
1-十一月-2010Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFETHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectricsHsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2008Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxideChen, Yung-Yu; Fu, Wen-Yu; Yeh, Ching-Fa; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap levelHsieh, Chih-Ren; Chen, Yung-Yu; Lin, Wen-Shin; Lin, Gray; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
2009HfO2 Inter-Poly Dielectric Characteristics with Interface Fluorine PassivationChen, Yung-Yu; Hsieh, Chih-Ren; Lu, Kwung-Wen; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-一月-2010Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layerHsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung; 電機工程學系; Department of Electrical and Computer Engineering
1-九月-2007Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacksChen, Shih-Chang; Chen, Yung-Yu; Chang, Yu-Tzu; Lou, Jen-Chung; Kin, Kon-Tsu; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Reliability Improvement of HfO(2)/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation LayerHsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation LayerHsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2012Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantationChen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2007Thickness scaling and reliability comparison for the inter-poly high-kappa dielectricsChen, Yung-Yu; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 18 筆資料，總共 18 筆