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公開日期標題作者
1-十二月-2012Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-三月-2013Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access MemoryChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2013Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory DevicesChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Effect of Silicon Oxide Based RRAM with Tin DopingChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching DeviceSyu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-七月-2013Enhancement of the stability of resistive switching characteristics by conduction path reconstructionHuang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applicationsFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid TreatmentChang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2013Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layerHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-十二月-2009Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatmentChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Huang, Hui-Chun; Chen, Shih-Ching; Lu, Jin; Gan, Der-Shin; Ho, New-Jin; Young, Tai-Fa; Jhang, Geng-Wei; Tai, Ya-Hsiang; 顯示科技研究所; Institute of Display
28-一月-2013Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memoryChen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory DevicesChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
30-十一月-2011Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memoryFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2012Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid TreatmentTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
26-十二月-2011Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatmentChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-十二月-2011Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatmentChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applicationsHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applicationsHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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