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公開日期標題作者
1-八月-2018Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAMWu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-十月-2013Characteristics of hafnium oxide resistance random access memory with different setting compliance currentSu, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-十月-2017Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentYuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2019A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV DetectionChen, Po-Hsun; Tsao, Yu-Ching; Chien, Yu-Chieh; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Lu, Ying-Hsin; Shih, Chih-Cheng; Tai, Mao-Chou; Chen, Guan-Fu; Tsai, Yu-Lin; Huang, Hui-Chun; Tsai, Tsung-Ming; Chang, Ting-Chang; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
19-八月-2013Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid processChang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching DeviceSyu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-七月-2018Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memoryTseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-十一月-2018Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment TechniqueYang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-十一月-2013High performance of graphene oxide-doped silicon oxide-based resistance random access memoryZhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devicesChen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid TreatmentChang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2020Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation AnnealingWu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Chen, Wei-Jang; Yang, Chih-Cheng; Chen, Wen-Chung; Tai, Mao-Chou; Tan, Yung-Fang; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1970Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access MemoryZheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Shih, Lin-Yi; Shih, Yao-Kai; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Yang, Chih-Cheng; Wu, Pei-Yu; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2017Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memoryWu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十月-2019Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist EnvironmentChen, Hong-Chih; Kuo, Chuan-Wei; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Po-Hsun; Chen, Guan-Fu; Huang, Shin-Ping; Chen, Jian-Jie; Zhou, Kuan-Ju; Shih, Chih-Cheng; Tsao, Yu-Ching; Huang, Hui-Chun; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-一月-2020Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrodeHuang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-十二月-2013Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memoryZhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十二月-2016Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory DevicesChang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
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