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公開日期標題作者
1-八月-2011Bipolar resistive switching of chromium oxide for resistive random access memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access MemoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Li, Hung-Wei; Tsai, Yu-Ting; Chen, Chi-Wen; Sze, S. M.; Yeh(Huang), Fon-Shan; Tai, Ya-Hsiang; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
15-十二月-2007Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structureChen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Lin, Po-Shun; Chen, Shih-Cheng; Chin, Jing-Yi; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-六月-2020A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devicesLin, C. -Y.; Chen, P. -H.; Chang, T. -C.; Huang, W. -C.; Tan, Y. -F.; Lin, Y. -H.; Chen, W. -C.; Lin, C. -C.; Chang, Y. -F.; Chen, Y. -C.; Huang, H. -C.; Ma, X. -H.; Hao, Y.; Sze, S. M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2010Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technologyLiu, Po-Tsun; Huang, Chen-Shuo; Huang, Yi-Ling; Lin, Jing-Ru; Cheng, Szu-Lin; Nishi, Yoshio; Sze, S. M.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-十月-2012The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital AgeSze, S. M.; 交大名義發表; National Chiao Tung University
1-十一月-2008Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layerChen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, S. M.; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-十二月-2010Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidationChen, Shih-Cheng; Chang, Ting-Chang; Hsieh, Chieh-Ming; Li, Hung-Wei; Sze, S. M.; Nien, Wen-Ping; Chan, Chia-Wei; Yeh (Huang), Fon-Shan; Tai, Ya-Hsiang; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-一月-2018Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory ComputingWang, Z. R.; Li, Y.; Su, Y. T.; Zhou, Y. X.; Yin, K. S.; Cheng, L.; Chang, T. C.; Xue, K. H.; Sze, S. M.; Miao, X. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-三月-2011Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memoryChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh (Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-九月-2011Investigating the improvement of resistive switching trends after post-forming negative bias stress treatmentTseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Yang, Po-Chun; Chen, Yu-Ting; Jian, Fu-Yen; Sze, S. M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014InZnSnO-Based Electronic Devices for Flat Panel Display ApplicationsLiu, Po-Tsun; Fuh, Chur-Shyang; Fan, Yang-Shun; Sze, S. M.; 交大名義發表; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
28-五月-2007Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
3-十二月-2007Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-十月-2010Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatmentsChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatmentsChen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S. M.; Chen, Jason; Liao, I. H.; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-三月-2007Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channelsChen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Yeh, Ping-Hung; Weng, Chi-Feng; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
5-十一月-2007Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristicsChen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Chin, Jing-Yi; Yeh, Ping-Hung; Feng, Li-Wei; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
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