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公開日期
標題
作者
2017
4H型碳化矽溝槽式閘極金氧半場效功率電晶體之關鍵製程研究
曾元宏
;
崔秉鉞
;
Tseng, Yuan-Hung
;
Tsui, Bing-Yue
;
電子研究所
一月-2016
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
Wang, Pei-Yu
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2016
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
Wang, Pei-Yu
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-八月-2018
Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETs
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2008
Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
Tsui, Bing-Yue
;
Lu, Chi-Pei
;
Liu, Hsiao-Han
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-六月-2013
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
Chiu, Wei-Chih
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-六月-2017
Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation
Tseng, Yuan-Hung
;
Lin, Chung-Yu
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2015
A Comparison Study on the Al-based Interfacial Layers for Ge MIS Devices
Yang, Yi-Gin
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2017
A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FET
Lin, Po-Shao
;
Tsui, Bing-Yue
;
電機學院
;
電子工程學系及電子研究所
;
College of Electrical and Computer Engineering
;
Department of Electronics Engineering and Institute of Electronics
四月-2017
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
Tseng, Yuan-Hung
;
Wu, Tsung-Han
;
Tsui, Bing-Yue
;
Yen, Cheng-Tyng
;
Hung, Chien-Chung
;
Lee, Chwan-Ying
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-四月-2017
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
Tseng, Yuan-Hung
;
Wu, Tsung-Han
;
Tsui, Bing-Yue
;
Yen, Cheng-Tyng
;
Hung, Chien-Chung
;
Lee, Chwan-Ying
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2007
Current transport mechanisms of Schottky barrier and modified schottky barrier MOSFETs
Tsui, Bing-Yue
;
Lu, Chi-Pei
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-三月-2020
Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer
Tsui, Bing-Yue
;
Liao, Hsiu-Hsien
;
Chen, Yi-Ju
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2016
Effect of Formation Temperature on Quality of Gate Dielectric on Germanium Substrate
Wei, Erh-Jye
;
Tsui, Bing-Yue
;
Wu, Pin-Jiun
;
加速器光源科技與應用學位學程
;
電子工程學系及電子研究所
;
Master and Ph.D. Program for Science and Technology of Accelrrator Light Source
;
Department of Electronics Engineering and Institute of Electronics
1-三月-2019
Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma Treatment
Tsui, Bing-Yue
;
Cheng, Jung-Chien
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2006
Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)
Tsui, Bing-Yue
;
Weng, Chien-Li
;
Chang, Chih-Lien
;
Wei, Jeng-Hua
;
Tsai, Ming-Jinn
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-三月-2013
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
Tsui, Bing-Yue
;
Su, Ting-Ting
;
Shew, Bor-Yuan
;
Huang, Yang-Tung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-五月-2011
Effects of EUV Irradiation on Poly-Si SONOS NVM Devices
Tsui, Bing-Yue
;
Yen, Chih-Chan
;
Li, Po-Hsueh
;
Lai, Jui-Yao
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-九月-2018
Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts
Cheng, Jung-Chien
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-一月-2017
Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/Ge
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics