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Issue DateTitleAuthor(s)
20174H型碳化矽溝槽式閘極金氧半場效功率電晶體之關鍵製程研究曾元宏; 崔秉鉞; Tseng, Yuan-Hung; Tsui, Bing-Yue; 電子研究所
Jan-2016Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET StructureWang, Pei-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2016Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET StructureWang, Pei-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2018Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETsChen, Yi-Ju; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFETTsui, Bing-Yue; Lu, Chi-Pei; Liu, Hsiao-Han; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2013Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature processChiu, Wei-Chih; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2017Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion ImplantationTseng, Yuan-Hung; Lin, Chung-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015A Comparison Study on the Al-based Interfacial Layers for Ge MIS DevicesYang, Yi-Gin; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017A Comprehensive Evaluation of the Performance of Fin-type Epitaxial Tunnel Layer (ETL) Tunnel FETLin, Po-Shao; Tsui, Bing-Yue; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
Apr-2017A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambientTseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2017A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambientTseng, Yuan-Hung; Wu, Tsung-Han; Tsui, Bing-Yue; Yen, Cheng-Tyng; Hung, Chien-Chung; Lee, Chwan-Ying; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Current transport mechanisms of Schottky barrier and modified schottky barrier MOSFETsTsui, Bing-Yue; Lu, Chi-Pei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2020Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface LayerTsui, Bing-Yue; Liao, Hsiu-Hsien; Chen, Yi-Ju; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Effect of Formation Temperature on Quality of Gate Dielectric on Germanium SubstrateWei, Erh-Jye; Tsui, Bing-Yue; Wu, Pin-Jiun; 加速器光源科技與應用學位學程; 電子工程學系及電子研究所; Master and Ph.D. Program for Science and Technology of Accelrrator Light Source; Department of Electronics Engineering and Institute of Electronics
1-Mar-2019Effect of Ion-Implantation Temperature on Contact Resistance of Metal/n-Type 4H-SiC With Ar Plasma TreatmentTsui, Bing-Yue; Cheng, Jung-Chien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Effect of oxygen absorption on contact resistance between metal and carbon nano tubes (CNTs)Tsui, Bing-Yue; Weng, Chien-Li; Chang, Chih-Lien; Wei, Jeng-Hua; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2013Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectricTsui, Bing-Yue; Su, Ting-Ting; Shew, Bor-Yuan; Huang, Yang-Tung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2011Effects of EUV Irradiation on Poly-Si SONOS NVM DevicesTsui, Bing-Yue; Yen, Chih-Chan; Li, Po-Hsueh; Lai, Jui-Yao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2018Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic ContactsCheng, Jung-Chien; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017Effects of Vanadium Incorporation on the Electron Schottky Barrier Height Reduction of NiGe/GeChen, Yi-Ju; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 129  next >