1. 目前位置：

瀏覽 的方式： 作者 Chang, EY

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 59 筆  下一頁 >
公開日期標題作者
15-十月-2000A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset applicationChang, EY; Lee, DH; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-20052 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMTChu, LH; Chang, EY; Chen, SH; Lien, YC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-19972-V-operation delta-doped power HEMT's for personal handy-phone systemsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-19972-V-operation delta-doped power HEMT's for personal handy-phone systemsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
20012.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecyChen, SH; Chang, EY; Lin, YC; 材料科學與工程學系; Department of Materials Science and Engineering
20012.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system applicationChen, SH; Chang, EY; Lin, YC; Lee, CS; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-19965 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsLai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2001AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etchHuang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2001AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescenceFang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2000Backside copper metallization of GaAs MESFET's using Ta and TaN as diffusion barrierChang, EY; Chen, CY; Chang, L; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2001Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrierChen, CY; Chang, EY; Chang, L; Chen, SH; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-七月-2004Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applicationsChang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
15-二月-2004Controlled placement of self-organized Ge dots on patterned Si (001) surfacesLee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-七月-2006Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTsLin, YC; Chang, EY; Yamaguchi, H; Hirayama, Y; Chang, XY; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
2002An etch back technique to achieve sub-micron T-gate for GaAsFETs using I-line stepper and phase shift mask (PSM)Fu, DK; Chen, SH; Chang, HC; Chang, EY; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2003Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizationsFang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
15-六月-2003Flower-like distributed self-organized Ge dots on patterned Si (001) substratesLee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-一月-2001A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistorsChang, EY; Lai, YL; Lee, YS; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2005A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrateChang, EY; Yang, TH; Luo, GL; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
顯示 1 到 20 筆資料，總共 59 筆  下一頁 >