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公開日期標題作者
15-五月-2001Activation of p-type GaN in a pure oxygen ambientWen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2001Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor depositionWen, TC; Lee, WI; Sheu, JK; Chi, GC; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
15-九月-1996Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicLee, WI; Young, RL; Chen, WK; 電子物理學系; Department of Electrophysics
15-九月-1996Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicLee, WI; Young, RL; Chen, WK; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr
22-七月-1996Defects and degradation in ZnO varistorLee, WI; Young, RL; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr
16-九月-1996Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopyWang, YP; Lee, WI; Tseng, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
16-九月-1996Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopyWang, YP; Lee, WI; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999A dopant-related defect in Te-doped AlInPWu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
25-七月-2003Electrooptical properties of GaNAs/GaAs multiple quantum well structuresLee, JR; Chen, YY; Lu, CR; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics
1-五月-1998Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxySu, ZA; Huang, JH; Lee, WI; 電子物理學系; Department of Electrophysics
1-五月-2000Ga0.5In0.5P barrier layer for wet oxidation of AlAsLee, SC; Lee, WI; 電子物理學系; Department of Electrophysics
1-九月-2001Influence of barrier growth temperature on the properties of InGaN/GaN quantum WellWen, TC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
2001Influence of barrier growth temperature on the properties of InGaN/GaN quantum wellsWen, TC; Lee, SC; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-一月-2005Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectanceLee, JR; Lu, CR; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics
29-四月-2003Liquid phase deposited SiO2 on GaNWu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI; 電子物理學系; Department of Electrophysics
1-七月-2003Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatmentsLee, CC; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-一月-1999Majority- and minority-carrier traps in Te-doped AlInPWu, YR; Sung, WJ; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr