Skip navigation
瀏覽
學術出版
教師專書
期刊論文
會議論文
研究計畫
畢業論文
專利資料
技術報告
數位教材
開放式課程
專題作品
喀報
交大建築展
明竹
活動紀錄
圖書館週
研究攻略營
畢業典禮
開學典禮
數位典藏
楊英風數位美術館
詩人管管數位典藏
歷史新聞
交大 e-News
交大友聲雜誌
陽明交大電子報
陽明交大英文電子報
陽明電子報
校內出版品
交大出版社
交大法學評論
管理與系統
新客家人群像
全球客家研究
犢:傳播與科技
資訊社會研究
交大資訊人
交大管理學報
數理人文
交大學刊
交通大學學報
交大青年
交大體育學刊
陽明神農坡彙訊
校務大數據研究中心電子報
人間思想
文化研究
萌牙會訊
Inter-Asia Cultural Studies
醫學院年報
醫學院季刊
陽明交大藥學系刊
永續發展成果年報
Open House
畢業紀念冊
畢業紀念冊
項目
公開日期
作者
標題
關鍵字
研究人員
English
繁體
简体
目前位置:
國立陽明交通大學機構典藏
瀏覽 的方式: 作者 Simanjuntak, Firman Mangasa
跳到:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
或是輸入前幾個字:
排序方式:
標題
公開日期
上傳日期
排序方式:
升冪排序
降冪排序
結果/頁面
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
作者/紀錄:
全部
1
5
10
15
20
25
30
35
40
45
50
顯示 1 到 19 筆資料,總共 19 筆
公開日期
標題
作者
1-四月-2018
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
11-九月-2017
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Tsai, Tsung-Ling
;
Lin, Chun-An
;
Tseng, Tseung-Yuen
;
資訊工程學系
;
電子工程學系及電子研究所
;
Department of Computer Science
;
Department of Electronics Engineering and Institute of Electronics
21-一月-2020
Effects of pillar size modulation on the magneto-structural coupling in self-assembled BiFeO3-CoFe2O4 heteroepitaxy
Amrillah, Tahta
;
Chen, Yu-Xun
;
My Ngoc Duong
;
Abdussalam, Wildan
;
Simanjuntak, Firman Mangasa
;
Chen, Chia-Hao
;
Chu, Ying-Hao
;
Juang, Jenh-Yih
;
材料科學與工程學系
;
電子物理學系
;
Department of Materials Science and Engineering
;
Department of Electrophysics
20-七月-2015
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Tsai, Tsung-Ling
;
Lin, Chun-An
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
1-十一月-2019
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
1-十一月-2015
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Tsai, Tsung-Ling
;
Lin, Chun-An
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
30-八月-2018
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Aluguri, Rakesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
2-五月-2016
Impacts of Co doping on ZnO transparent switching memory device characteristics
Simanjuntak, Firman Mangasa
;
Prasad, Om Kumar
;
Panda, Debashis
;
Lin, Chun-An
;
Tsai, Tsung-Ling
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
資訊工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Computer Science
;
Department of Electronics Engineering and Institute of Electronics
1-十一月-2019
Improving linearity by introducing Al in HfO2 as a memristor synapse device
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Saminathan, R.
;
Panda, Debashis
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
9-四月-2020
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Simanjuntak, Firman Mangasa
;
Ohno, Takeo
;
Chandrasekaran, Sridhar
;
Tseng, Tseung-Yuen
;
Samukawa, Seiji
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
20-九月-2017
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
Simanjuntak, Firman Mangasa
;
Chandrasekaran, Sridhar
;
Pattanayak, Bhaskar
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
;
資訊工程學系
;
電子工程學系及電子研究所
;
Department of Computer Science
;
Department of Electronics Engineering and Institute of Electronics
30-八月-2018
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
Singh, Pragya
;
Simanjuntak, Firman Mangasa
;
Kumar, Amit
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
1-十二月-2017
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
Simanjuntak, Firman Mangasa
;
Singh, Pragya
;
Chandrasekaran, Sridhar
;
Lumbantoruan, Franky Juanda
;
Yang, Chih-Chieh
;
Huang, Chu-Jie
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
資訊工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Computer Science
;
Department of Electronics Engineering and Institute of Electronics
14-十一月-2019
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor
Pattanayak, Bhaskar
;
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Yang, Chih-Chieh
;
Kumar, Amit
;
Phuoc-Anh Le
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
1-七月-2020
Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers
Singh, Pragya
;
Simanjuntak, Firman Mangasa
;
Wu, Yi-Chu
;
Kumar, Amit
;
Zan, Hsiao-Wen
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
光電工程學系
;
光電工程研究所
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
;
Department of Photonics
;
Institute of EO Enginerring
19-八月-2016
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
17-八月-2020
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Chang, Lung-Yu
;
Simanjuntak, Firman Mangasa
;
Hsu, Chun-Ling
;
Chandrasekaran, Sridhar
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
19-十月-2018
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
Simanjuntak, Firman Mangasa
;
Chandrasekaran, Sridhar
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
1-五月-2019
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
Simanjuntak, Firman Mangasa
;
Chandrasekaran, Sridhar
;
Lin, Chun-Chieh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering