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顯示 1 到 19 筆資料，總共 19 筆
公開日期標題作者
1-四月-2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layerChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
11-九月-2017Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memoryChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
21-一月-2020Effects of pillar size modulation on the magneto-structural coupling in self-assembled BiFeO3-CoFe2O4 heteroepitaxyAmrillah, Tahta; Chen, Yu-Xun; My Ngoc Duong; Abdussalam, Wildan; Simanjuntak, Firman Mangasa; Chen, Chia-Hao; Chu, Ying-Hao; Juang, Jenh-Yih; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
20-七月-2015Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double formingSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing SchemeChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十一月-2015Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrodeSimanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-八月-2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicesChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
2-五月-2016Impacts of Co doping on ZnO transparent switching memory device characteristicsSimanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Improving linearity by introducing Al in HfO2 as a memristor synapse deviceChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
9-四月-2020Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applicationsSimanjuntak, Firman Mangasa; Ohno, Takeo; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; Samukawa, Seiji; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
20-九月-2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
30-八月-2018Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memorySingh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十二月-2017Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
14-十一月-2019Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitorPattanayak, Bhaskar; Simanjuntak, Firman Mangasa; Panda, Debashis; Yang, Chih-Chieh; Kumar, Amit; Phuoc-Anh Le; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; 電機工程學系; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-七月-2020Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layersSingh, Pragya; Simanjuntak, Firman Mangasa; Wu, Yi-Chu; Kumar, Amit; Zan, Hsiao-Wen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering; Department of Photonics; Institute of EO Enginerring
19-八月-2016Status and Prospects of ZnO-Based Resistive Switching Memory DevicesSimanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-八月-2020Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devicesChang, Lung-Yu; Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
19-十月-2018Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-五月-2019ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devicesSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
顯示 1 到 19 筆資料，總共 19 筆